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Sulfur passivation for shallow ohmic contacts to
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10.1063/1.1807013
/content/aip/journal/apl/85/16/10.1063/1.1807013
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/16/10.1063/1.1807013

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM image of a contact prepared with the conventional surface treatment and annealed at for .

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM image of a contact prepared using the sulfide rinse treatment. The sample was annealed at for .

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM image of a contact prepared using the sulfide rinse treatment and annealing at for .

Image of FIG. 4.
FIG. 4.

Cross-sectional TEM image of a contact prepared with the modified surface treatment and annealing at for .

Image of FIG. 5.
FIG. 5.

Dependence of etch depth of on the concentration.

Tables

Generic image for table
Table I.

Comparison of the specific contact resistances for the as-deposited contacts with different surface treatments.

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/content/aip/journal/apl/85/16/10.1063/1.1807013
2004-10-22
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Sulfur passivation for shallow Pd∕W∕Au ohmic contacts to p-InGaSb
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/16/10.1063/1.1807013
10.1063/1.1807013
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