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Spatial variation of luminescence from AlGaN grown by facet controlled epitaxial lateral overgrowth
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View: Figures


Image of FIG. 1.
FIG. 1.

Cross-section schematic diagram of the specimen (left) is shown with a cross-section TEM image (right) at the same scale. Two sets of dislocation lines are labeled, 1 is between the GaN and the AlGaN and 2 is located within the AlGaN.

Image of FIG. 2.
FIG. 2.

Cross-section TEM image taken at an apex of the GaN template, with diffraction conditions (top). A schematic diagram of the same region is also shown (bottom) with the AlGaN growth fronts marked by broken lines. Some AlGaN grows vertically from the GaN apex and some grows laterally from the side facets of the GaN template, as denoted by the arrows. Dislocations are observed at the boundary between the laterally and vertically grown AlGaN, marked with solid lines in the schematic diagram.

Image of FIG. 3.
FIG. 3.

CL spectrum taken at low temperatures in cross section over six periods of the FACELO pattern. The peaks at wavelengths of 317, 328, and are related to aluminum compositions of 0.20, 0.14, and 0.12, respectively.

Image of FIG. 4.
FIG. 4.

Cross-section monochromatic CL images taken at the same location, at wavelengths ranging from . A secondary electron image and a schematic diagram of the specimen configuration are also shown. In the latter, the region in the CL images is denoted with a broken rectangle, and light grey represents regions of low aluminum content, dark grey represents regions of high aluminum content, and GaN is white.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spatial variation of luminescence from AlGaN grown by facet controlled epitaxial lateral overgrowth