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Evolution of stress in GaN heteroepitaxy on : From hydrostatic compressive to biaxial tensile
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10.1063/1.1808237
/content/aip/journal/apl/85/16/10.1063/1.1808237
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/16/10.1063/1.1808237
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Birds eye view FEREM images of bare AlN and GaN nucleation layers on top of it for different growth times as indicated.

Image of FIG. 2.
FIG. 2.

Lattice parameters (a) and cell volume (b) for GaN nucleation layers for different growth times. The corresponding values for relaxed GaN are indicated as well.

Image of FIG. 3.
FIG. 3.

-PL measurements of GaN nucleation layers for various growth times as indicated. The vertical dashed lines mark the position of multi-LO-phonon Raman lines.

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/content/aip/journal/apl/85/16/10.1063/1.1808237
2004-10-22
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evolution of stress in GaN heteroepitaxy on AlN∕Si(111): From hydrostatic compressive to biaxial tensile
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/16/10.1063/1.1808237
10.1063/1.1808237
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