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A hybrid epitaxy method for on
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10.1063/1.1808241
/content/aip/journal/apl/85/16/10.1063/1.1808241
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/16/10.1063/1.1808241
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

An isothermal section of a schematic phase diagram showing the equilibrium liquid and solid compositions.

Image of FIG. 2.
FIG. 2.

High-resolution, cross-sectional TEM photomicrograph of heterojunction grown at the temperature of (a) and (b).

Image of FIG. 3.
FIG. 3.

Forward bias current–voltage characteristics of heterojunction rectifiers grown at low temperature (LT) and high temperature (HT).

Image of FIG. 4.
FIG. 4.

Forward bias current–voltage characteristics of LT heterojunction rectifiers before and after annealing at 500, 600, and , respectively.

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/content/aip/journal/apl/85/16/10.1063/1.1808241
2004-10-22
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A hybrid epitaxy method for InAs on GaP
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/16/10.1063/1.1808241
10.1063/1.1808241
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