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Ammonia pretreatment for high- dielectric growth on silicon
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Image of FIG. 1.
FIG. 1.

IR transmission absorbance spectra from hydrogen terminated , taken in situ at incidence angle, as the surface was exposed to a 4% gas mixture (atmospheric pressure) for at the indicated. temperature. The reference spectrum for (a) is from the -terminated surface and for (b) it is from the sample exposed to at .

Image of FIG. 2.
FIG. 2.

IR absorbance spectra of grown by ALD at on a nitrided silicon surface, prepared by exposure of a -terminated surface at (a) and (b) , at atmospheric pressure. The reference spectrum is the respective nitrided surface in both cases.

Image of FIG. 3.
FIG. 3.

IR absorbance spectra showing the oxidation of -thick on as a function of the exposure temperature. The reference is the -terminated surface.

Image of FIG. 4.
FIG. 4.

Peak areas of the longitudinal optical (LO) absorption band (assumed proportional to film thickness) as a function of the deposition cycle for different surfaces: , and .


Generic image for table
Table I.

Summary of growth by annealing H-teminated in 4% . The temperatures are measured using a thermocouple (TM) clipped to the sample and by infrared optical pyrometry. The nitride thicknesses were calculated using the measured MEIS nitrogen areal density and assuming the has the density of bulk , then estimating other film thicknesses grown at other temperatures by comparing the nitride LO mode absorption intensity .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ammonia pretreatment for high-κ dielectric growth on silicon