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Strong charge carrier confinement in purely strain induced single quantum wires
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10.1063/1.1807948
/content/aip/journal/apl/85/17/10.1063/1.1807948
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/17/10.1063/1.1807948

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional representation of sample A (not to scale). Each QWR is located in the QW and forms exclusively by the strain field from the stressor layer.

Image of FIG. 2.
FIG. 2.

PL signals of four individual T-shaped QWRs and of the reference GaAs QW of sample A. The inset shows the spatial PL intensity distributions of QWR1 and the GaAs QW at the position of QWR1 (white lines mark the T-shaped intersection). The intensity of QWR1 is high (bright), where the QW intensity shows a minimum (dark).

Image of FIG. 3.
FIG. 3.

Confinement energy and PL intensity of the strained QWR at the T-shaped intersection of the -wide stressor layer and the -wide overgrown GaAs QW in sample B as a function of the excitation power.

Tables

Generic image for table
Table I.

Experimentally determined confinement energies as a function of the layer widths and of the overgrown GaAs QW and the stressor layers.

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/content/aip/journal/apl/85/17/10.1063/1.1807948
2004-10-29
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strong charge carrier confinement in purely strain induced GaAs∕InAlAs single quantum wires
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/17/10.1063/1.1807948
10.1063/1.1807948
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