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Cross-sectional representation of sample A (not to scale). Each QWR is located in the QW and forms exclusively by the strain field from the stressor layer.
PL signals of four individual T-shaped QWRs and of the reference GaAs QW of sample A. The inset shows the spatial PL intensity distributions of QWR1 and the GaAs QW at the position of QWR1 (white lines mark the T-shaped intersection). The intensity of QWR1 is high (bright), where the QW intensity shows a minimum (dark).
Confinement energy and PL intensity of the strained QWR at the T-shaped intersection of the -wide stressor layer and the -wide overgrown GaAs QW in sample B as a function of the excitation power.
Experimentally determined confinement energies as a function of the layer widths and of the overgrown GaAs QW and the stressor layers.
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