Film thickness (open markers) and RBS-determined -dose (closed markers) for a deposition on silicon (triangles, dashed fit line) and germanium (circles, solid fit line) substrates. A linear growth is observed independent of the substrate. The different offset is attributed to a difference in interfacial layer thickness.
TEM pictures of a layer deposited on (a) last, (b) -last, and (c) -last anneal starting surface. Note the significant thinner interfacial layer for the substrate.
TOF SIMS depth profiles for (a) layers deposited at 300 (with or without PDA) and on an -last starting surface, (b) layers deposited on an -last anneal (prior to deposition) starting surface. indiffusion is clearly temperature related and can be reduced by a surface pretreatment.
measurements of capacitor structures. The layer was deposited on an -last starting surface with or without anneal prior to deposition.
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