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Deposition of on germanium and the impact of surface pretreatments
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10.1063/1.1810642
/content/aip/journal/apl/85/17/10.1063/1.1810642
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/17/10.1063/1.1810642
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Film thickness (open markers) and RBS-determined -dose (closed markers) for a deposition on silicon (triangles, dashed fit line) and germanium (circles, solid fit line) substrates. A linear growth is observed independent of the substrate. The different offset is attributed to a difference in interfacial layer thickness.

Image of FIG. 2.
FIG. 2.

TEM pictures of a layer deposited on (a) last, (b) -last, and (c) -last anneal starting surface. Note the significant thinner interfacial layer for the substrate.

Image of FIG. 3.
FIG. 3.

TOF SIMS depth profiles for (a) layers deposited at 300 (with or without PDA) and on an -last starting surface, (b) layers deposited on an -last anneal (prior to deposition) starting surface. indiffusion is clearly temperature related and can be reduced by a surface pretreatment.

Image of FIG. 4.
FIG. 4.

measurements of capacitor structures. The layer was deposited on an -last starting surface with or without anneal prior to deposition.

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/content/aip/journal/apl/85/17/10.1063/1.1810642
2004-10-29
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Deposition of HfO2 on germanium and the impact of surface pretreatments
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/17/10.1063/1.1810642
10.1063/1.1810642
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