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Structural and interface properties of an AlN diamond ultraviolet light emitting diode
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Double-axis x-ray diffractogram of a -thick epitaxial AlN:Si film grown on a (100) substrate (slit aperture 1°). The inset shows the AlN 002 reflection in - and -scan direction with FWHM linewidths of 0.17° and 1.36°, respectively, as measured in triple-axis configuration. (b) X-ray diffraction pole figure ( scan) (slit aperture 1°). The sample normal has been tilted out of the measurement plane to enable detection of the most intense AlN 101 and diamond 111 reflections.

Image of FIG. 2.
FIG. 2.

The in-plane orientation relationship of wurtzite–AlN (0001) epitaxially grown on cubic-diamond (100) is represented in (a) [011] for the predominant AlN domains (type I) and (b) [011] for the other domains (type II).

Image of FIG. 3.
FIG. 3.

Photocurrent vs applied voltage under pulsed excimer-laser illumination at for the determination of the effective built-in voltage of the AlN∕diamond diode.

Image of FIG. 4.
FIG. 4.

Spectrally resolved photoconductivity: (a) AlN∕diamond heterojunction; (b) -AlN film alone measured between two coplanar contacts and the -diamond substrate measured before AlN heteroepitaxy.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural and interface properties of an AlN diamond ultraviolet light emitting diode