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(a) Double-axis x-ray diffractogram of a -thick epitaxial AlN:Si film grown on a (100) substrate (slit aperture 1°). The inset shows the AlN 002 reflection in - and -scan direction with FWHM linewidths of 0.17° and 1.36°, respectively, as measured in triple-axis configuration. (b) X-ray diffraction pole figure ( scan) (slit aperture 1°). The sample normal has been tilted out of the measurement plane to enable detection of the most intense AlN 101 and diamond 111 reflections.
The in-plane orientation relationship of wurtzite–AlN (0001) epitaxially grown on cubic-diamond (100) is represented in (a)  for the predominant AlN domains (type I) and (b)  for the other domains (type II).
Photocurrent vs applied voltage under pulsed excimer-laser illumination at for the determination of the effective built-in voltage of the AlN∕diamond diode.
Spectrally resolved photoconductivity: (a) AlN∕diamond heterojunction; (b) -AlN film alone measured between two coplanar contacts and the -diamond substrate measured before AlN heteroepitaxy.
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