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Current modulation of a hygroscopic insulator organic field-effect transistor
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10.1063/1.1811798
/content/aip/journal/apl/85/17/10.1063/1.1811798
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/17/10.1063/1.1811798
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Output and transfer characteristics of a hygroscopic insulator field-effect transistor measured in air and an inset of the schematic cross section of the device.

Image of FIG. 2.
FIG. 2.

When switching the gate voltage for a constant drain voltage no difference is observed in the linear and saturated regime of the device. The upper part shows the gate voltage while the lower part shows the drain current response for the two different drain voltages.

Image of FIG. 3.
FIG. 3.

Switching the pinch-off between the s-d contacts by changing s-d polarity at time reveals that the pinch-off is too slow to be electronic. The upper part of the graph shows the s-d current while the lower part shows the gate current during the pinch-off switch.

Image of FIG. 4.
FIG. 4.

Switching the pinch-off (at time ) between the s-d contacts for different constant gate voltages shows that the time response is slower for increasing gate voltages. Function (1) is fitted to the decreasing and the increasing source-drain current, respectively, to estimate the rate constants, and .

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/content/aip/journal/apl/85/17/10.1063/1.1811798
2004-10-25
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Current modulation of a hygroscopic insulator organic field-effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/17/10.1063/1.1811798
10.1063/1.1811798
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