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Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Two rubrene single-crystal FETs fabricated by means of electrostatic bonding on (a) and (b). In (a) the electrodes have been defined by evaporation through a shadow mask, whereas in (b) photolithography and lift-off were used. In both (a) and (b) the bar is long.

Image of FIG. 2.
FIG. 2.

Source–drain current vs source–drain voltage measured at different gate voltages for a device fabricated on , with an channel length and channel width. The inset shows similar data for a FET fabricated using parylene .

Image of FIG. 3.
FIG. 3.

(a) Mobility vs gate voltage for a device on , measured at different values of source–drain voltage (, , , , , respectively), obtained using Eq. (1). Note that in the linear regime does not depend on and [the apparent peak at low values is an artifact originating from the use of Eq. (1) outside the linear regime]. (b) curves as measured for the four different gate insulators. For device based on parylene , the suppression of contact effects often requires the use of a rather large value (and thus , to remain in the linear regime).

Image of FIG. 4.
FIG. 4.

Decrease of the mobility with increasing , as observed in rubrene single-crystal FETs with different gate insulators. The bars give a measure of the spread in mobility values. Inset: when plotted on a log–log scale, the available data show a linear dependence with slope (i.e., the variation in is proportional to ).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors