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Extremely high electron mobility of pseudomorphic modulation-doped quantum wells grown on substrates by molecular-beam epitaxy
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10.1063/1.1807023
/content/aip/journal/apl/85/18/10.1063/1.1807023
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/18/10.1063/1.1807023
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of the MD-QW structure.

Image of FIG. 2.
FIG. 2.

content dependence of electron mobility and sheet electron concentration of the MD-QWs.

Image of FIG. 3.
FIG. 3.

Electron mobilities at of the and (100) MD-QWs with plotted as a function of sheet electron concentration. Electron mobilities of (100) MD-QWs reported so far are also plotted.

Image of FIG. 4.
FIG. 4.

Temperature dependence of electron mobilities and sheet electron concentration of the and (100) MD-QWs.

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/content/aip/journal/apl/85/18/10.1063/1.1807023
2004-11-03
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Extremely high electron mobility of pseudomorphic In0.74Ga0.26As∕In0.46Al0.54As modulation-doped quantum wells grown on (411)AInP substrates by molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/18/10.1063/1.1807023
10.1063/1.1807023
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