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-type ZnO films by monodoping of nitrogen and ZnO-based homojunctions
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10.1063/1.1808229
/content/aip/journal/apl/85/18/10.1063/1.1808229
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/18/10.1063/1.1808229

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction patterns of undoped and N-doped ZnO films deposited on Si(100) substrate at .

Image of FIG. 2.
FIG. 2.

Room-temperature PL spectra for ZnO-based film excited by the line of a He–Cd laser. (a) ZnO film; (b) ZnO:N film.

Image of FIG. 3.
FIG. 3.

Dependence of conductivity on the temperature for ZnO and ZnO:N film.

Image of FIG. 4.
FIG. 4.

The curve for the two-layer structured ZnO homojunction with TiN as bottom electrode. The inset shows the schematic cross section of the ZnO homojunction.

Tables

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Table I.

Electrical properties of ZnO and ZnO:N films at room temperature.

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/content/aip/journal/apl/85/18/10.1063/1.1808229
2004-11-03
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: p-type ZnO films by monodoping of nitrogen and ZnO-based p–n homojunctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/18/10.1063/1.1808229
10.1063/1.1808229
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