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A Raman scattering-based method to probe the carrier drift velocity in semiconductors: Application to gallium nitride
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10.1063/1.1808231
/content/aip/journal/apl/85/18/10.1063/1.1808231
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/18/10.1063/1.1808231

Figures

Image of FIG. 1.
FIG. 1.

Plasmon modes in doped zinc-blende GaN with , and field strength . They were calculated using , , , and angles , , and (from right to left); .

Image of FIG. 2.
FIG. 2.

Single particle bands in doped zinc-blende GaN with , and field strength . They were calculated using , , , and angles , , and (from right to left); .

Tables

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Table I.

Frequency shift of Eq. (6).

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/content/aip/journal/apl/85/18/10.1063/1.1808231
2004-11-03
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A Raman scattering-based method to probe the carrier drift velocity in semiconductors: Application to gallium nitride
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/18/10.1063/1.1808231
10.1063/1.1808231
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