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High-power and reliable operation of vertical light-emitting diodes on bulk GaN
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10.1063/1.1810631
/content/aip/journal/apl/85/18/10.1063/1.1810631
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/18/10.1063/1.1810631
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross sections and top contact patterns of the lateral and vertical LEDs on sapphire or GaN substrates.

Image of FIG. 2.
FIG. 2.

Forward characteristics of the lateral and vertical LEDs on sapphire or GaN. The inset shows the same data plotted on a log–log scale.

Image of FIG. 3.
FIG. 3.

Light output of the LEDs as a function of injection current measured in cw mode.

Image of FIG. 4.
FIG. 4.

Normalized optical power of the LEDs as a function of stress time.

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/content/aip/journal/apl/85/18/10.1063/1.1810631
2004-11-03
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-power and reliable operation of vertical light-emitting diodes on bulk GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/18/10.1063/1.1810631
10.1063/1.1810631
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