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Hysteretic current–voltage characteristics and resistance switching at a rectifying interface
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10.1063/1.1812580
/content/aip/journal/apl/85/18/10.1063/1.1812580
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/18/10.1063/1.1812580
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

characteristics of TE/PCMO/SRO layered structures with five different TEs. Here, TE, PCMO, and SRO stand for top electrode, , and , respectively. The upper panel of the insets shows a schematic of the samples. The lower one shows for , Au, Ag, and Ti.

Image of FIG. 2.
FIG. 2.

characteristics of a Ti/PCMO/SRO layered structure measured with repeated voltage scan up to 45th cycle. The inset shows the time chart of the current.

Image of FIG. 3.
FIG. 3.

characteristics of a Ti/PCMO/SRO layered structure drawn in (a) linear and (b) semilogarismic current scales. Insets schematically show electronic band diagrams for a rectifying Ti/PCMO interface.

Image of FIG. 4.
FIG. 4.

(a) Forward bias characteristic of a Ti/PCMO/SRO layered structure. Low and high resistance states ( and ) after voltage scans of are defined at the filled and open stars, respectively. Each resistance value was evaluated by measuring current at a of . (b) Resistance switching behavior (bottom) started from the state, by applying a sequence of pulsed voltage stress (top) of . (c) Pulsed voltage duration dependence of the low (square) and high (circle) resistance states. The filled and open symbols represent the data started from and , respectively. (d) dependence of the resistance ratio .

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/content/aip/journal/apl/85/18/10.1063/1.1812580
2004-11-03
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/18/10.1063/1.1812580
10.1063/1.1812580
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