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Determination of energy barrier profiles for high- dielectric materials utilizing bias-dependent internal photoemission
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View: Figures


Image of FIG. 1.
FIG. 1.

Current through film as a function of incident photon energy. Inset: output spectrum of Hg–Xe light source.

Image of FIG. 2.
FIG. 2.

Yield to the , , and power. A linear fit to these curves is extrapolated to the axis to provide a numerical value for the barrier height.

Image of FIG. 3.
FIG. 3.

Barrier height profile as function of voltage for on . The dotted line indicates the voltage at which the current switches sign. The square dots on the left of the dotted line are extracted from the curves and indicate the barrier for electrons from the metal. The triangles on the right are the barrier heights extracted from the curves. The circles on the right are from the curves. The triangles and circles indicate the barrier for electrons coming from the silicon substrate. This simulation takes into account image potential barrier lowering.

Image of FIG. 4.
FIG. 4.

Barrier height profile for and on . The data and barrier height simulation curves on the left hand side of the vertical dashed line represent negative photocurrents. The data and simulation curves on the right hand side represent positive photocurrents. The open symbols and dashed lines are for while the solid symbols and solid lines are for . Squares indicate data extracted from vs energy curves. Triangles correspond to data while circles correspond to data. This simulation considers the maximum barrier height at each voltage and the depletion region in the silicon substrate.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of energy barrier profiles for high-k dielectric materials utilizing bias-dependent internal photoemission