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Recombination activity of interstitial iron and other transition metal point defects in - and -type crystalline silicon
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10.1063/1.1812833
/content/aip/journal/apl/85/18/10.1063/1.1812833
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/18/10.1063/1.1812833

Figures

Image of FIG. 1.
FIG. 1.

Modeled and measured lifetimes for in - and -type silicon.

Image of FIG. 2.
FIG. 2.

Measured control and implanted lifetimes, and calculated lifetime due to only for the sample.

Image of FIG. 3.
FIG. 3.

Capture cross section ratio as a function of energy level depth for impurities in Table I.

Tables

Generic image for table
Table I.

Recombination parameters of point-like metal impurities in crystalline silicon at RT.

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/content/aip/journal/apl/85/18/10.1063/1.1812833
2004-11-03
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/18/10.1063/1.1812833
10.1063/1.1812833
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