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Thermal stability of electron traps in grown by metalorganic chemical vapor deposition
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10.1063/1.1814801
/content/aip/journal/apl/85/18/10.1063/1.1814801
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/18/10.1063/1.1814801
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Deep level spectra for MOCVD showing an increase in trap concentrations with repeated cycling to . The effects of bias during cooling from were secondary to the effects of heating.

Image of FIG. 2.
FIG. 2.

Deep level profiles for each of the peaks shown in Fig. 1. Uniform depth profile for each trap indicates that they do not result from diffusion from either the contact surface or the substrate side of the epilayer during annealing.

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/content/aip/journal/apl/85/18/10.1063/1.1814801
2004-11-03
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal stability of electron traps in GaN grown by metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/18/10.1063/1.1814801
10.1063/1.1814801
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