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Scattering loss in silicon-on-insulator rib waveguides fabricated by inductively coupled plasma reactive ion etching
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10.1063/1.1815063
/content/aip/journal/apl/85/18/10.1063/1.1815063
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/18/10.1063/1.1815063
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic description of the SOI rib waveguide cross section.

Image of FIG. 2.
FIG. 2.

Three-dimensional AFM image of SOI rib waveguide endface profile after depositing silicon oxynitride films (a) SOI rib waveguide endface obtained by conventional CMP technique; (b) SOI rib waveguide enface obtained by ICPRIE using a three-mask lithography process.

Image of FIG. 3.
FIG. 3.

Three-dimensional AFM image of Si/air surface profile at the top of SOI rib waveguide.

Image of FIG. 4.
FIG. 4.

Three-dimensional AFM image of sidewall surface profile of the rib with height of .

Image of FIG. 5.
FIG. 5.

Scattering loss predictions from sidewall surface roughness using Tien’s theory at .

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/content/aip/journal/apl/85/18/10.1063/1.1815063
2004-11-03
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Scattering loss in silicon-on-insulator rib waveguides fabricated by inductively coupled plasma reactive ion etching
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/18/10.1063/1.1815063
10.1063/1.1815063
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