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Improved characteristics for Schottky contacts through the use of a nonaqueous sulfide-based passivation
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10.1063/1.1815073
/content/aip/journal/apl/85/19/10.1063/1.1815073
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/19/10.1063/1.1815073

Figures

Image of FIG. 1.
FIG. 1.

curves of Schottky contacts under forward and reverse biases. The diodes were fabricated on surfaces prepared by the processes (a) through (d).

Image of FIG. 2.
FIG. 2.

curves corrected for the series resistance and plotted on a semilog scale.

Tables

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Table I.

Device parameters: Ideality factor, , and barrier height, , of a Schottky diode resulting from various surface treatments performed prior to Au contact fabrication. The reported errors are derived from measurements of four to ten separate diodes for each surface treatment.

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/content/aip/journal/apl/85/19/10.1063/1.1815073
2004-11-08
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved characteristics for Au∕n‐GaSb Schottky contacts through the use of a nonaqueous sulfide-based passivation
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/19/10.1063/1.1815073
10.1063/1.1815073
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