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curves of Schottky contacts under forward and reverse biases. The diodes were fabricated on surfaces prepared by the processes (a) through (d).
curves corrected for the series resistance and plotted on a semilog scale.
Device parameters: Ideality factor, , and barrier height, , of a Schottky diode resulting from various surface treatments performed prior to Au contact fabrication. The reported errors are derived from measurements of four to ten separate diodes for each surface treatment.
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