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Avalanche spin-valve transistor
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10.1063/1.1818339
/content/aip/journal/apl/85/19/10.1063/1.1818339
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/19/10.1063/1.1818339
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of sample structure. See the text for doping information and composition fractions. The arrows in the “graded” regions denote the direction of increasing concentration.

Image of FIG. 2.
FIG. 2.

Schematic band diagram of the device in operation. The -doped -type layer in the collector increases the base-collector barrier, thus reducing the leakage current.

Image of FIG. 3.
FIG. 3.

Multiplication vs voltage of the device at . Avalanche multiplication can be observed for collector voltages greater than .

Image of FIG. 4.
FIG. 4.

Magnetoresistance traces at for collector voltages below and above the avalanche muliplication threshold. Closed circles correspond to a magnetic field sweep from to ; open circles correspond to a sweep in the opposite direction. Avalanche multiplication increases the magnitude of the signal by a factor of , without a significant decrease in the magnetocurrent.

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/content/aip/journal/apl/85/19/10.1063/1.1818339
2004-11-08
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Avalanche spin-valve transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/19/10.1063/1.1818339
10.1063/1.1818339
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