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Schematic diagram of sample structure. See the text for doping information and composition fractions. The arrows in the “graded” regions denote the direction of increasing concentration.
Schematic band diagram of the device in operation. The -doped -type layer in the collector increases the base-collector barrier, thus reducing the leakage current.
Multiplication vs voltage of the device at . Avalanche multiplication can be observed for collector voltages greater than .
Magnetoresistance traces at for collector voltages below and above the avalanche muliplication threshold. Closed circles correspond to a magnetic field sweep from to ; open circles correspond to a sweep in the opposite direction. Avalanche multiplication increases the magnitude of the signal by a factor of , without a significant decrease in the magnetocurrent.
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