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Esaki junctions with autocompensated impurities in the side by metalorganic chemical vapor deposition
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10.1063/1.1819996
/content/aip/journal/apl/85/19/10.1063/1.1819996
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/19/10.1063/1.1819996
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Characteristics measured from the tunneling diodes having the same area of . Each corresponds to a junction, with its side doped at a normalized flow ratio as marked.

Image of FIG. 2.
FIG. 2.

RT Hall electron concentration and zero-bias specific tunnel resistance as functions of normalized silane flow ratio.

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/content/aip/journal/apl/85/19/10.1063/1.1819996
2004-11-08
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaAs Esaki junctions with autocompensated impurities in the n side by metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/19/10.1063/1.1819996
10.1063/1.1819996
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