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Field-controlled domain-wall resistance in magnetic nanojunctions
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10.1063/1.1771455
/content/aip/journal/apl/85/2/10.1063/1.1771455
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/2/10.1063/1.1771455
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Micromagnetic structure and conductance of an asymmetric nanojunction: (a) Magnetic structure of the full-size junction at saturation (bottom panel) and of the junction’s central region for and (top panels), (b) hysteresis loop, and (c) conductance vs applied field.

Image of FIG. 2.
FIG. 2.

(a) Magnetic structure within the constriction for a nanojunction with soft and hard electrodes for and and (b) conductance vs applied field.

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/content/aip/journal/apl/85/2/10.1063/1.1771455
2004-07-08
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Field-controlled domain-wall resistance in magnetic nanojunctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/2/10.1063/1.1771455
10.1063/1.1771455
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