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(Color) Structure of the nanoscale metal–semiconductor grating photodetector. The rectangle shows the cross section corresponding to the electric field intensity of Fig. 2.
(Color) Cross section of the calculated spatial distribution of the electric field intensity in the absorbing wire, in TM (a) and TE (b) polarization.
(Color) Scanning electron microscope images of the sample (a) after the selective etching of the GaAs layer; The different layers (GaAs, , and ) can be distinguished by transparency, and (b) after the underetching and the silver deposition.
Reflectivity measurements (a) and calculations (b) of the device in TE and TM polarization, and reflectivity of the nonprocessed epilayer.
Photocurrent measurements (+) and calculations (solid line) in TE polarization.
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