1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Efficient light absorption in metal–semiconductor–metal nanostructures
Rent:
Rent this article for
USD
10.1063/1.1771467
/content/aip/journal/apl/85/2/10.1063/1.1771467
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/2/10.1063/1.1771467
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color) Structure of the nanoscale metal–semiconductor grating photodetector. The rectangle shows the cross section corresponding to the electric field intensity of Fig. 2.

Image of FIG. 2.
FIG. 2.

(Color) Cross section of the calculated spatial distribution of the electric field intensity in the absorbing wire, in TM (a) and TE (b) polarization.

Image of FIG. 3.
FIG. 3.

(Color) Scanning electron microscope images of the sample (a) after the selective etching of the GaAs layer; The different layers (GaAs, , and ) can be distinguished by transparency, and (b) after the underetching and the silver deposition.

Image of FIG. 4.
FIG. 4.

Reflectivity measurements (a) and calculations (b) of the device in TE and TM polarization, and reflectivity of the nonprocessed epilayer.

Image of FIG. 5.
FIG. 5.

Photocurrent measurements (+) and calculations (solid line) in TE polarization.

Loading

Article metrics loading...

/content/aip/journal/apl/85/2/10.1063/1.1771467
2004-07-08
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Efficient light absorption in metal–semiconductor–metal nanostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/2/10.1063/1.1771467
10.1063/1.1771467
SEARCH_EXPAND_ITEM