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Growth of thick GaN using a metal interlayer
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10.1063/1.1818736
/content/aip/journal/apl/85/20/10.1063/1.1818736
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/20/10.1063/1.1818736
/content/aip/journal/apl/85/20/10.1063/1.1818736
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/content/aip/journal/apl/85/20/10.1063/1.1818736
2004-11-16
2014-07-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of thick (112¯0) GaN using a metal interlayer
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/20/10.1063/1.1818736
10.1063/1.1818736
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