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Thermal effects on the magnetic-field dependence of spin-transfer-induced magnetization reversal
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10.1063/1.1819516
/content/aip/journal/apl/85/20/10.1063/1.1819516
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/20/10.1063/1.1819516
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Figures

Image of FIG. 1.
FIG. 1.

(a) Scatter in vs RA product. The results for all device sizes are essentially identical after a constant lead resistance of is subtracted from the raw data. Inset: SEM images of 50-, 75-, and hexagonal devices. Respective areas are 0.0035, 0.0083, and . (b) Scatter in the dipole and coercive fields and . The inset showing a zero-bias hysteresis loop from a device shows how and are defined.

Image of FIG. 2.
FIG. 2.

(a) vs . The critical currents for reversing the free-layer magnetization vary with the applied in-plane field. (b) Phase diagram illustrating how the critical switching currents vary with for several devices. (c) Results from numerical simulations for different values of . (d) The critical current densities for current-induced reversal increase with increasing coercive field. The solid lines are calculated from Eq. (3) assuming .

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/content/aip/journal/apl/85/20/10.1063/1.1819516
2004-11-15
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal effects on the magnetic-field dependence of spin-transfer-induced magnetization reversal
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/20/10.1063/1.1819516
10.1063/1.1819516
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