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Conduction-band-energy diagram of the “injector active region” of the device when states and are at resonance, under an applied electric field . Shown are the moduli squared of the relevant wave functions. The injector region is -type doped over the indicated range. The layer thicknesses in nm from left to right are: ; where the barriers are underlined. The first four layers are , where is 0.02, 0.04, 0.06, and 0.08, respectively.
Intersubband electroluminescence spectra at: (a) , for four different currents under pulsed conditions (, ). The low-energy peak is due to photon-assisted tunneling of electrons from the injector ground state (level ) to the state; while the high-energy peak is due to the vertical transition between the and states; (b) room temperature and drive current (i.e., current density).
Light-current curves under pulsed-drive conditions (, ) at and at room temperature.
Conduction-band-energy diagram for device optimized for 95% tunneling-injection efficiency from the state to the state. The injector region is -type doped just as shown in Fig. 1 for the nonoptimized device. The layer thicknesses in nm from left to right are: ; where the barriers are underlined.
Intersubband electroluminescence spectra at and at room temperature for the optimized device shown in Fig. 4.
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