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Growth of highly (100) oriented lead zirconate titanate films on silicon and glass substrates using lanthanum nitrate as a buffer layer
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10.1063/1.1819519
/content/aip/journal/apl/85/20/10.1063/1.1819519
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/20/10.1063/1.1819519
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Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction patterns of PZT films as a function of heat treatment temperature of the LaNit buffer layer. All the PZT films were annealed at for after pyrolysis at .

Image of FIG. 2.
FIG. 2.

SEM microstructures of PZT films coated on LaNit buffer layers that have been heat treated at (a) and (b) .

Image of FIG. 3.
FIG. 3.

Morphology of PZT film: (a) TEM bright field image showing PZT, , and Pt layers, and (b) HRTEM image showing the PZT and LaNit buffer layers.

Image of FIG. 4.
FIG. 4.

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/content/aip/journal/apl/85/20/10.1063/1.1819519
2004-11-16
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of highly (100) oriented lead zirconate titanate films on silicon and glass substrates using lanthanum nitrate as a buffer layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/20/10.1063/1.1819519
10.1063/1.1819519
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