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Doping of low-temperature GaAs and GaMnAs with carbon
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10.1063/1.1819522
/content/aip/journal/apl/85/20/10.1063/1.1819522
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/20/10.1063/1.1819522
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Change of the vertical lattice parameter with respect to bulk GaAs depending on carbon content for several GaAs:C (open symbols) and GaMnAs:C (closed symbols) layers. The growth conditions are given in the figure. The lines are a guide to the eye.

Image of FIG. 2.
FIG. 2.

(a) SIMS and (b) e- depth profiles of a LT and a HT GaAs:C layer structure (open and closed symbols, respectively). The LT GaAs:C layer was grown at , , .

Image of FIG. 3.
FIG. 3.

In-plane spontaneous magnetization vs temperature for a GaMnAs and a GaMnAs:C layer grown at and . Inset: Normalized hysteresis curves at .

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/content/aip/journal/apl/85/20/10.1063/1.1819522
2004-11-15
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Doping of low-temperature GaAs and GaMnAs with carbon
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/20/10.1063/1.1819522
10.1063/1.1819522
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