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Determination of the carrier concentration in single quantum wells using Raman scattering
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View: Figures


Image of FIG. 1.
FIG. 1.

A Raman scattering spectrum obtained for an single quantum well sample (gray line). The spectrum shows the LO, TO and the branches of the LOPC mode. The solid black line is the result of the fitting analysis using Eq. (1), which shows both the and branches of the LOPC mode. The inset is the expansion of the spectral region in the vicinity of LO and TO phonon modes.

Image of FIG. 2.
FIG. 2.

A plot of the mode as a function of the plasmon frequency for a series of single quantum well samples (solid squares). The plasmon frequency, , was obtained from fitting the LOPC mode in the samples. The solid lines are plots of and given by Eq. (4). The dashed lines represent the LO and TO phonon frequencies.

Image of FIG. 3.
FIG. 3.

The frequency maximum, , of branch as a function of the carrier concentration obtained from the data in Fig. 2. The solid line is a first order linear fit of the data.

Image of FIG. 4.
FIG. 4.

Rapid thermal annealing effect on the LOPC mode in single quantum well. The gray lines represent the Raman scattering spectra obtained for unannealed and annealed samples cut from the same wafer. The thin black lines represent the results of the fitting analysis.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scattering