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Microdischarge devices with 10 or square silicon cathode cavities: scaling and production of the excimer
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10.1063/1.1825061
/content/aip/journal/apl/85/21/10.1063/1.1825061
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/21/10.1063/1.1825061
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Voltage–current characteristics of silicon trench microcathode devices operating in at pressures from 700 to . The data were acquired with of ballast and the inset is a generalized schematic diagram of the device structure. For all the devices, the depth of the square trench was . Experimental uncertainties, representative of all of the data, are indicated for several measurements. The curves drawn here (as well as those in Figs. 2 and 3) are intended as a guide for the eye.

Image of FIG. 2.
FIG. 2.

Data similar to those of Fig. 1 for devices but otherwise identical structures.

Image of FIG. 3.
FIG. 3.

Dependence of device ignition voltage on for 10, 30, and square trench devices operating in . Experimental uncertainties are again shown for several measurements.

Image of FIG. 4.
FIG. 4.

Emission spectra in the region for mixtures in square trench devices. The inset is an expanded view of the fluorescence in the green in which the most prominent vibrational bands are indicated. The spectra have been corrected for the response of the detection system over this wavelength interval. Note that, for the upper three spectra, the relative intensity in the region has been magnified by a factor of two for clarity.

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/content/aip/journal/apl/85/21/10.1063/1.1825061
2004-11-23
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microdischarge devices with 10 or 30μm square silicon cathode cavities: pd scaling and production of the XeO excimer
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/21/10.1063/1.1825061
10.1063/1.1825061
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