1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Interaction between interstitials and arsenic-vacancy complexes in crystalline silicon
Rent:
Rent this article for
USD
10.1063/1.1825616
/content/aip/journal/apl/85/21/10.1063/1.1825616
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/21/10.1063/1.1825616

Figures

Image of FIG. 1.
FIG. 1.

This figure shows the steps of I-V recombination: (a) the defect, (b) the initial bond defect, (c) the transition state, and (d) the recovered silicon lattice. For annihilation, the following steps are shown: (e) the defect, (f) the initial bond defect, (g) the transition state, and (h) and the recovered defect. For clarity, we number the atoms that are strongly involved in each mechanism. The silicon interstitial in each case is colored black.

Image of FIG. 2.
FIG. 2.

Isosurface maps of electron localization functions (ELFs) for the intial bond defect, the transition state, and the final state for the annihilation [(a)–(c)], AsV annihilation [(d)–(f)], annihilation [(g)–(i)], and [(j)–(l)], respectively. The ELF isosurfaces are set to 0.65. As atoms are circled.

Tables

Generic image for table
Table I.

Energy gain and annihilation energy barriers in eV for the reactions of and to form . The indicated initial positions of As atoms are labeled in Fig. 1.

Loading

Article metrics loading...

/content/aip/journal/apl/85/21/10.1063/1.1825616
2004-11-22
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interaction between interstitials and arsenic-vacancy complexes in crystalline silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/21/10.1063/1.1825616
10.1063/1.1825616
SEARCH_EXPAND_ITEM