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Effect of growth temperature on morphology, structure and luminescence of Eu-doped GaN thin films
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10.1063/1.1825619
/content/aip/journal/apl/85/21/10.1063/1.1825619
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/21/10.1063/1.1825619
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The SEM cross-sectional images of GaN:Eu films grown on silicon substrates at RT (a), 573 K (b), and 773 K (c).

Image of FIG. 2.
FIG. 2.

The XRD patterns of GaN:Eu films grown at various temperatures.

Image of FIG. 3.
FIG. 3.

Electron diffraction patterns and the corresponding HRTEM images of GaN:Eu films grown at RT (a), 573 K (b), and 773 K (c).

Image of FIG. 4.
FIG. 4.

The x-ray EDS of GaN:Eu film grown at 773 K.

Image of FIG. 5.
FIG. 5.

The PL spectra of GaN:Eu films grown at various temperatures. The PL data were recorded at room temperature under the same conditions.

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/content/aip/journal/apl/85/21/10.1063/1.1825619
2004-11-23
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of growth temperature on morphology, structure and luminescence of Eu-doped GaN thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/21/10.1063/1.1825619
10.1063/1.1825619
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