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PL spectra of GaN epitaxial layer (with MOCVD-grown GaN template) at and , grown on a (0001) sapphire substrate. Key: Peak exciton transition, peaks b, c, and emission, peaks e and emission.
PL spectra of two layers with (plots b and d) and (plots a and c) measured using the same excitation conditions at and .
Temperature-dependent PL spectra of layers with (a) and (b) using the same excitation conditions (plots , , , , , and ). In the inset, a solid line is the fitting of Eq. (1) to the intensities of the peak A.
Arrhenius plot of the intensity of the Mn acceptor line of layers with . The data yield an activation energy of .
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