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Anomalous energetics and defect-assisted diffusion of Ga in silicon
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10.1063/1.1826230
/content/aip/journal/apl/85/21/10.1063/1.1826230
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/21/10.1063/1.1826230
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Absolute formation energy [Eq. (1)] of (dash-dotted), the main complexes (solid) and the complex (dashed) vs the Fermi level. The slopes of the different portions of the curves equal the charge state of the system, and the crossing points are the thermal charging levels.

Image of FIG. 2.
FIG. 2.

Energy path for the kick-out of by self-interstitials.

Image of FIG. 3.
FIG. 3.

Ga-vacancy interaction energy for the pair ring mechanism vs the NEB hypercoordinate. The dots indicate the vacancy being first, second, third neighbor of Ga.

Image of FIG. 4.
FIG. 4.

Activation energy for the main diffusion mechanism assisted by interstitials and vacancies (see legends).

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/content/aip/journal/apl/85/21/10.1063/1.1826230
2004-11-23
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anomalous energetics and defect-assisted diffusion of Ga in silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/21/10.1063/1.1826230
10.1063/1.1826230
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