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FTIR spectra of undoped (a) and Ge-doped thin films (b), (c).
XRD profiles of Ge-doped thin films (a), and variation in the FWHM of (111) (b), and the interplanar distances of (111) planes of (c), for films with varying Ge content.
Hole density (a), Hall mobility (b), and resistivity (c) measured at room temperature for Si-doped (crosses) or Ge-doped (closed circles) thin films.
Variation of the hole density with inverse temperature for a Ge-doped thin film with a Ge content of 0.8 at. %.
Variations of the hole density (a), Hall mobility (b), and resistivity (c) of thin films for varying Pb content measured at room temperature.
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