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Control of the growth orientation and electrical properties of polycrystalline thin films by group-IV elements doping
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10.1063/1.1827352
/content/aip/journal/apl/85/21/10.1063/1.1827352
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/21/10.1063/1.1827352
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

FTIR spectra of undoped (a) and Ge-doped thin films (b), (c).

Image of FIG. 2.
FIG. 2.

XRD profiles of Ge-doped thin films (a), and variation in the FWHM of (111) (b), and the interplanar distances of (111) planes of (c), for films with varying Ge content.

Image of FIG. 3.
FIG. 3.

Hole density (a), Hall mobility (b), and resistivity (c) measured at room temperature for Si-doped (crosses) or Ge-doped (closed circles) thin films.

Image of FIG. 4.
FIG. 4.

Variation of the hole density with inverse temperature for a Ge-doped thin film with a Ge content of 0.8 at. %.

Image of FIG. 5.
FIG. 5.

Variations of the hole density (a), Hall mobility (b), and resistivity (c) of thin films for varying Pb content measured at room temperature.

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/content/aip/journal/apl/85/21/10.1063/1.1827352
2004-11-22
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Control of the growth orientation and electrical properties of polycrystalline Cu2O thin films by group-IV elements doping
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/21/10.1063/1.1827352
10.1063/1.1827352
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