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Organic thin-film transistors having inorganic/organic double gate insulators
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10.1063/1.1825054
/content/aip/journal/apl/85/22/10.1063/1.1825054
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/22/10.1063/1.1825054

Figures

Image of FIG. 1.
FIG. 1.

The structures of OTFTs. (a) The conventional BC OTFTs with a layer as gate insulator; (b) Our OTFTs with double gate insulator.

Image of FIG. 2.
FIG. 2.

The drain-current vs drain-voltage characteristics of OTFTs at varied gate voltage from to . (a) The conventional BC OTFTs with a layer as gate insulator; (b) Our OTFTs with double gate insulator.

Image of FIG. 3.
FIG. 3.

The vs characteristics of OTFTs with two gate insulators ( and ) at a . Devices with and were compared, showing that the OTFT with increases the field-effect mobility.

Image of FIG. 4.
FIG. 4.

The current–voltage characteristics of two gate insulators were measured using sandwich electrodes pair of doped .

Image of FIG. 5.
FIG. 5.

The morphology of deposited on OTS substrate held at .

Tables

Generic image for table
Table I.

Electrical parameters of transistors based on two insulators ( and ). Mobilities were extracted from the saturation region, and on/off ratio defined the drain current from to . The on-state current and leakage current were defined the drain current fixed when , and , respectively. The capacitances of two gate insulators were measured based on a sandwich structure of doped .

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/content/aip/journal/apl/85/22/10.1063/1.1825054
2004-12-01
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Organic thin-film transistors having inorganic/organic double gate insulators
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/22/10.1063/1.1825054
10.1063/1.1825054
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