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The structures of OTFTs. (a) The conventional BC OTFTs with a layer as gate insulator; (b) Our OTFTs with double gate insulator.
The drain-current vs drain-voltage characteristics of OTFTs at varied gate voltage from to . (a) The conventional BC OTFTs with a layer as gate insulator; (b) Our OTFTs with double gate insulator.
The vs characteristics of OTFTs with two gate insulators ( and ) at a . Devices with and were compared, showing that the OTFT with increases the field-effect mobility.
The current–voltage characteristics of two gate insulators were measured using sandwich electrodes pair of doped .
The morphology of deposited on OTS substrate held at .
Electrical parameters of transistors based on two insulators ( and ). Mobilities were extracted from the saturation region, and on/off ratio defined the drain current from to . The on-state current and leakage current were defined the drain current fixed when , and , respectively. The capacitances of two gate insulators were measured based on a sandwich structure of doped .
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