1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
In situ synthesis of thin films for tunnel junctions
Rent:
Rent this article for
USD
10.1063/1.1828582
/content/aip/journal/apl/85/22/10.1063/1.1828582
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/22/10.1063/1.1828582
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic sectional view (not to scale) of the Mg vapor source, the incorporated substrate heater (S) and the B sputter target. The overall diameter of the cylindrical oven is .

Image of FIG. 2.
FIG. 2.

Temperature-dependent resistivity of a -thick as-grown (dashed line) and a -thick in situ postannealed (solid line) film on -plane sapphire. Inset: Transport critical current density vs temperature of the in situ postannealed film (criterion for the critical current: voltage drop, measured on a -long and -wide microbridge).

Image of FIG. 3.
FIG. 3.

Conductance, , vs voltage of a tunnel junction, measured at with normal conducting electrodes. The voltage polarity is that of the In counterelectrode with respect to the base electrode. Solid line: as measured, dashed line: after elimination of inelastic effects from the measured data, dotted line: offset parabola fit. The inset illustrates a model of the potential barrier, I.

Loading

Article metrics loading...

/content/aip/journal/apl/85/22/10.1063/1.1828582
2004-12-01
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ synthesis of MgB2 thin films for tunnel junctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/22/10.1063/1.1828582
10.1063/1.1828582
SEARCH_EXPAND_ITEM