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High-power InGaAsN strain-compensated lasers fabricated with pulsed anodic oxidation
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10.1063/1.1828596
/content/aip/journal/apl/85/22/10.1063/1.1828596
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/22/10.1063/1.1828596
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM image of a ridge waveguide laser diode fabricated with pulsed anodic oxidation.

Image of FIG. 2.
FIG. 2.

Room-temperature cw light output power from a single facet vs injection current for a ridge waveguide InGaAsN laser diode fabricated with pulsed anodic oxidation. The laser was not facet coated, but was bonded -side down on copper heatsinks with indium.

Image of FIG. 3.
FIG. 3.

A typical lasing spectrum of the laser in Fig. 2 at an injection current of .

Image of FIG. 4.
FIG. 4.

Temperature-dependent optical power versus current characteristics of the InGaAsN triple-QW laser in Fig. 2. It lased up to . The characteristic temperature was in the linear region .

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/content/aip/journal/apl/85/22/10.1063/1.1828596
2004-12-01
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-power 1.3‐μm InGaAsN strain-compensated lasers fabricated with pulsed anodic oxidation
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/22/10.1063/1.1828596
10.1063/1.1828596
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