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SEM image of a ridge waveguide laser diode fabricated with pulsed anodic oxidation.
Room-temperature cw light output power from a single facet vs injection current for a ridge waveguide InGaAsN laser diode fabricated with pulsed anodic oxidation. The laser was not facet coated, but was bonded -side down on copper heatsinks with indium.
A typical lasing spectrum of the laser in Fig. 2 at an injection current of .
Temperature-dependent optical power versus current characteristics of the InGaAsN triple-QW laser in Fig. 2. It lased up to . The characteristic temperature was in the linear region .
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