Full text loading...
Scanning electron microscope images of the fabricated device. (a) Full top view. (b) Magnified top view of triangular hole. (c) Cross-sectional side view of the hole formed on upper multilayer DBR.
(Color) Lasing characteristics for type A device. (a) Light output power vs injection current characteristic. (b) Lasing spectrum observed at an output power of . (c) NFP. Yellow solid lines and dashed red line are added to indicate positions of triangular holes and oxide aperture, respectively. (d) FFP.
(Color) Lasing characteristics of type B device. (a)–(d) are the same as those for Fig. 3 except that the lasing spectrum was measured at an output power of . The arrow below the NFP indicates the orientation of polarization.
Relation of measured SMSR and maximum output power . The SMSR was measured at half the maximum power for each sample. Open and closed circles denote device types A and B, respectively.
(Color) 3D-FDTD simulation of holey VCSEL using fourfold symmetric boundaries. (a) Calculation model divided by 3 Yee cells. Standard material indexes were first assumed and then slightly changed so that multiple Yee cells satisfy high reflectivity condition of distributed Bragg reflectors (DBRs) and resonant condition of the cavity at . (b) and (c) Electric field distributions of the fundamental mode, which are calculated without and with the ring region of higher refractive index, respectively. Asymmetry seen in modal profile (c) is caused by the small asymmetry of the model divided by cubic Yee cells.
Article metrics loading...