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Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling
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10.1063/1.1830679
/content/aip/journal/apl/85/23/10.1063/1.1830679
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/23/10.1063/1.1830679
/content/aip/journal/apl/85/23/10.1063/1.1830679
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/content/aip/journal/apl/85/23/10.1063/1.1830679
2004-12-08
2014-12-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/23/10.1063/1.1830679
10.1063/1.1830679
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