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Intersubband absorption spectra of InAs∕AlSb MQWs at 79 K for samples A, B, C, and D. A large line width broadening is observed for sample D.
Measured and simulated XRD spectra for two types of InAs (1.8 nm)∕AlSb (5.4 nm) MQWs. The top two curves are of MQW with InSb bonds at each interface (sample E) and the lower for MQW with InSb top and AlAs bottom interfaces (sample F).
Integrated ISBT intensity for samples A–D. A drastic reduction in the intensity ocurrs for between 2 and 3 nm.
Intersubband absorption spectrum for 60 periods of MQW with (sample I) together with those for samples A, B, and C.
Sample structure, electron density, and mobility at 77 K in MQWs.
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