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Comparison between atomic-layer-deposited films using or oxidant and precursor
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10.1063/1.1829773
/content/aip/journal/apl/85/24/10.1063/1.1829773
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1829773
/content/aip/journal/apl/85/24/10.1063/1.1829773
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/content/aip/journal/apl/85/24/10.1063/1.1829773
2004-12-09
2014-10-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf[N(CH3)2]4 precursor
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1829773
10.1063/1.1829773
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