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IPE yield (a) and its square root (b) as a function of photon energy measured in capacitors. The open and filled symbols correspond to applied oxide electric field of and , respectively. The inset in panel (b) illustrates determination of the IPE thresholds from plot. The IPE and photoconductivity thresholds are indicated by arrows. Lines guide the eye.
IPE yield as a function of photon energy measured on samples in the as-deposited state (circles) or additionally subjected to oxidation in at (squares). The open and filled symbols correspond to an applied oxide electric field bias of and , respectively. Arrows indicate the observed trends.
(a) Energy band diagram of the interface inferred from IPE and PC experiments. The origin of the energy scale is placed at the top of Si VB. The values of the band diagram parameters are listed in Table I for the four oxides studied and for the elemental and (Ref. 8). (b) The scheme of coupling between states of Sc and those of Gd, Dy and other RE states in complex oxides, derived from the x-ray absorption spectra near the edge.
Energy band diagram parameters of interfaces between Si and different deposited metal oxides.
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