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Why can be readily equilibrium-doped -type but the wider-gap cannot?
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10.1063/1.1830074
/content/aip/journal/apl/85/24/10.1063/1.1830074
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1830074
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

-type doping rules. The terms “anion” and “cation” refer to the host atoms: Cu, In, Ga, and Se.

Image of FIG. 2.
FIG. 2.

(a) and related defect formation energies in CIS and CGS under growth conditions favorable for -type doping (point in Fig. 4). The arrows show the Fermi energy where the concentrations of the charged defects are balanced, , and the maximum Fermi energy . The vertical line indicates the self-consistenly calculated equilibrium Fermi energy at . (b) The ensuing defect concentrations under these growth conditions ().

Image of FIG. 3.
FIG. 3.

(a) and related defect formation energies under “point ” growth conditions. indicates the Fermi energy where of the donor and the acceptor intersect. (b) The ensuing calculated defect concentrations at .

Image of FIG. 4.
FIG. 4.

Phase diagram indicating the stability region of CIS and CGS (gray), and the respective competing phases. The point defines the growth conditions optimal for -type doping.

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/content/aip/journal/apl/85/24/10.1063/1.1830074
2004-12-09
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Why can CuInSe2 be readily equilibrium-doped n-type but the wider-gap CuGaSe2 cannot?
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1830074
10.1063/1.1830074
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