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Spin-polarized tunneling in room-temperature mesoscopic spin valves
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Atomic force microscope image of a device and schematic of the measuring configuration. The thin aluminum strip ( thick) is oxidized and contacted with two ferromagnetic (FM) electrodes of different thicknesses (CoFe, ; NiFe, ); (b) and (c) scanning electron microscope images of two devices with different distances between the FM electrodes. Bars are long.

Image of FIG. 2.
FIG. 2.

(a) Spin-valve transresistance for two samples: one at (larger variation) and the other at room temperature (RT), ; (b) logarithm of the spin transresistance change as a function of the distance between the ferromagnetic electrodes for four sets of samples. The top curve (open circles) was taken at the rest at RT. The thickness of the Al strip is (triangles) and (open and solid circles and diamonds). The lines are fittings to Eq. (1). Inset: as a function of current bias for a sample with at . A significant drop in is seen for .

Image of FIG. 3.
FIG. 3.

(a) Calculated polarization by fitting the spin-valve transresistance dependence on the distance between the ferromagnetic electrodes to Eq. (1). Lowest resistance polarization value is from Ref. 3. The line is a guide to the eye: (b) and (c) experimental curves at for (open circles) and (solid circles). NiFe (b); CoFe (c). These are four probe measurements with a , sine voltage.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spin-polarized tunneling in room-temperature mesoscopic spin valves