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(Color online) The growth structures of two wafers, Nos. 1681 and 1693, in our experiments and corresponding conduction-band profiles at zero gate bias.
(Color online) Typical characteristics of a HEMT fabricated from wafer 1681. The result of room-temperature PL and an AFM image are shown in the insets.
(Color online) Hysteresis and real-time operations of a memory device at room temperature.
(Color online) Gate-bias dependence of the decay of at room temperature. is fixed at during the measurements.
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