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Room-temperature operations of memory devices based on self-assembled InAs quantum dot structures
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10.1063/1.1831558
/content/aip/journal/apl/85/24/10.1063/1.1831558
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1831558
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) The growth structures of two wafers, Nos. 1681 and 1693, in our experiments and corresponding conduction-band profiles at zero gate bias.

Image of FIG. 2.
FIG. 2.

(Color online) Typical characteristics of a HEMT fabricated from wafer 1681. The result of room-temperature PL and an AFM image are shown in the insets.

Image of FIG. 3.
FIG. 3.

(Color online) Hysteresis and real-time operations of a memory device at room temperature.

Image of FIG. 4.
FIG. 4.

(Color online) Gate-bias dependence of the decay of at room temperature. is fixed at during the measurements.

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/content/aip/journal/apl/85/24/10.1063/1.1831558
2004-12-09
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room-temperature operations of memory devices based on self-assembled InAs quantum dot structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1831558
10.1063/1.1831558
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