1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Effects of periodic delta-doping on the properties of GaN:Si films grown on Si (111) substrates
Rent:
Rent this article for
USD
10.1063/1.1832758
/content/aip/journal/apl/85/24/10.1063/1.1832758
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1832758
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM micrographs of GaN films grown on Si (111) substrate with and without periodic Si -doping. (a) Sample A without Si -doping; (b) sample B with Si -doping and with a silane flow of 0.11 μmol/min; (c) sample C with Si -doping and with a silane flow of 0.134 μmol/min; and (d) sample D with Si -doping and with a silane flow rate of 0.17 μmol/min.

Image of FIG. 2.
FIG. 2.

Raman spectra of GaN films on AlN/Si(111) without and with periodic Si -doping. The phonon shows blueshift with increased flow rate of silane due to Si -doping.

Image of FIG. 3.
FIG. 3.

Room temperature micro-photoluminescence spectra for the four samples (A, B, C, and D). PL peak energy shows blueshift with an increase of silane flow rate due to periodic -doping.

Loading

Article metrics loading...

/content/aip/journal/apl/85/24/10.1063/1.1832758
2004-12-09
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of periodic delta-doping on the properties of GaN:Si films grown on Si (111) substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1832758
10.1063/1.1832758
SEARCH_EXPAND_ITEM