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Voltage-induced degradation in self-aligned polycrystalline silicon gate -type field-effect transistors with gate dielectrics
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10.1063/1.1834992
/content/aip/journal/apl/85/24/10.1063/1.1834992
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1834992
/content/aip/journal/apl/85/24/10.1063/1.1834992
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/content/aip/journal/apl/85/24/10.1063/1.1834992
2004-12-09
2014-10-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Voltage-induced degradation in self-aligned polycrystalline silicon gate n-type field-effect transistors with HfO2 gate dielectrics
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1834992
10.1063/1.1834992
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