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Defects and strain relaxation in silicon-germanium-on-insulator formed by high-temperature oxidation
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10.1063/1.1835532
/content/aip/journal/apl/85/24/10.1063/1.1835532
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1835532
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Residual compressive strain in SGOI layer measured by x-ray diffraction, formed after high temperature oxidation, vs final SGOI thickness. Data include SGOI formed from both (open circles) and (closed circles) initial layers after oxidation ranging from 1200 to . The solid line is the calculated equilibrium residual strain of a strained layer containing a network of noninteracting dislocations.

Image of FIG. 2.
FIG. 2.

Optical micrograph showing etched defects in a thin strained layer grown on SGOI layers with (a) , and (b) , . In (a) the etch pit density is about 1000 times greater than the SF density, whereas in (b) the densities are about equal .

Image of FIG. 3.
FIG. 3.

Planar defect density vs final SGOI thickness for an initial layer of grown on an SOI substrate and oxidized at 1200, 1250, and .

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/content/aip/journal/apl/85/24/10.1063/1.1835532
2004-12-09
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defects and strain relaxation in silicon-germanium-on-insulator formed by high-temperature oxidation
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1835532
10.1063/1.1835532
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