Full text loading...
Residual compressive strain in SGOI layer measured by x-ray diffraction, formed after high temperature oxidation, vs final SGOI thickness. Data include SGOI formed from both (open circles) and (closed circles) initial layers after oxidation ranging from 1200 to . The solid line is the calculated equilibrium residual strain of a strained layer containing a network of noninteracting dislocations.
Optical micrograph showing etched defects in a thin strained layer grown on SGOI layers with (a) , and (b) , . In (a) the etch pit density is about 1000 times greater than the SF density, whereas in (b) the densities are about equal .
Planar defect density vs final SGOI thickness for an initial layer of grown on an SOI substrate and oxidized at 1200, 1250, and .
Article metrics loading...